Jingxu Xie

Jingxu Xie

Email: jingxuxie [at] berkeley [dot] edu

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portfolio

publications

talks

Engineering Correlated Insulators in Bilayer Graphene with a Remote Coulomb Superlattice

Published:

Electron superlattices provide a powerful way to engineer novel correlated and topological quantum phenomena. Recently, the moiré pattern was discovered to offer an almost perfect nanometer-scale electronic superlattice. However, the requirement of the moiré pattern poses a stringent limit on the material selection, and the moiré potential is fixed for a given moiré heterostructure. Here we solve these problems by engineering tunable correlated states in bilayer graphene with a remote Coulomb superlattice. The Coulomb superlattice is realized by localized electrons in a twisted bilayer WS2 which is around 3 nm apart. The period of the Coulomb superlattice is determined by the moiré period of the twisted bilayer WS2, and the strength is controlled by the number of localized electrons at the bilayer WS2 moiré lattice. We demonstrate that the 2DEG in bilayer graphene is described by the Fermi liquid when the remote Coulomb superlattice is turned off. Electron correlation increases dramatically when the remote Coulomb superlattice is turned on, resulting in a series of correlated insulating states at both integer and fractional filling factors. This remote Coulomb superlattice can be applied to any 2D materials hosting a 2DEG. It opens a new route for in-situ control of correlated quantum phenomena in a wide variety of 2D systems.

P-type WSe2 for Next-Generation Valleytronics

Published:

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic devices at the nanometer scale with lower heat dissipation. We present a new technique to utilize the novel spin-valley coupling in this system for the realization of the next-generation valleytronics.

Next-Generation Light Emitting and Sensing Devices for Optical Telecommunication

Published:

We propose to explore a novel hybrid heterostructure comprised of two-dimensional (2D) semiconductors, especially transition metal dichalcogenides (TMD) coupled with lanthanide-doped nanoparticles (LnNPs), and its integration into complementary metal-oxide-semiconductor (CMOS) technology. These systems will use the excellent light-absorbing properties of the TMDs to sensitize the narrow-bandwidth NIR emissions of the LnNPs. Subsequent integration of these materials with CMOS technology will create a novel system for short-range data transmission and sensitive photodetection. Due to the ease of fabrication of these materials and the strong light-matter interactions in TMDs, these systems are expected to provide a low-cost and low-energy-consuming alternative to conventional technologies.

teaching

Teaching experience 1

Undergraduate course, University 1, Department, 2014

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Teaching experience 2

Workshop, University 1, Department, 2015

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